Semiconductor light emitting device

ABSTRACT

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2014-065821, filed on Mar. 27, 2014; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor lightemitting device.

BACKGROUND

A semiconductor light emitting device of a chip-sized package structureis proposed. In the semiconductor light emitting device, a fluorescentmaterial layer is provided on a first side of a semiconductor layerincluding a light emitting layer. An electrode, an interconnect layer,and a resin layer are provided on a second side of the semiconductorlayer. Roughening of the first (light extraction) side of thesemiconductor layer to improve light-extraction efficiency also has beenproposed; however to further improve efficiency, a more suitably controlof the roughening process is desired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view of a semiconductor lightemitting device of an embodiment;

FIG. 2A and FIG. 2B are schematic plan views of a semiconductor lightemitting device of the embodiment;

FIG. 3A is a schematic enlarged cross-sectional view of a portion of asemiconductor light emitting device of the embodiment and FIG. 3B is aschematic plan view of a portion of a semiconductor light emittingdevice of a reference example;

FIG. 4A is a distribution of luminous intensity characteristic diagramfor a semiconductor light emitting device of the embodiment and FIG. 4Bis the distribution of luminous intensity characteristic diagram for asemiconductor light emitting device of a reference example;

FIG. 5 is a laser microscope image of a first side in a semiconductorlight emitting device of the embodiment;

FIG. 6 is an electron microscope image of a cross-section in a firstside of a semiconductor light emitting device of the embodiment;

FIG. 7A to FIG. 13B are schematic cross-sectional views showing a methodfor manufacturing the semiconductor light emitting device of theembodiment; and

FIG. 14 is a schematic cross-sectional view of a semiconductor lightemitting device of the embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor light emitting deviceincludes a semiconductor layer, a first electrode, a second electrode, afirst insulating film, a first interconnect portion, a secondinterconnect portion, a second insulating film, and an optical layer.The semiconductor layer includes a first side, a second side opposite tothe first side, and a light emitting layer. The first electrode isprovided on the semiconductor layer on the second side. The secondelectrode is provided on the semiconductor layer on the second side. Thefirst insulating film is provided on the second side. The firstinterconnect portion is provided on the first insulating film andconnected to the first electrode. The second interconnect portion isprovided on the first insulating film and connected to the secondelectrode. The second insulating film is provided between the firstinterconnect portion and the second interconnect portion, and at anouter periphery of a side face of the semiconductor layer. The opticallayer is provided on the first side and on the second insulating film atthe outer periphery. The optical layer is transmissive with respect tolight emitted from the light emitting layer. A plurality of protrusionsand a plurality of recesses are provided at the first side. Peaks of theprotrusions are positioned closer to the second side than an end on thesecond insulating film side of the optical layer at the outer periphery.

Embodiments will be described below with reference to drawings. Notethat the same reference numerals are applied for the same elements ineach drawing.

FIG. 1 is a schematic cross-sectional view of a semiconductor lightemitting device of an embodiment.

FIG. 2A is a schematic plan view illustrating an example of a planarlayout for a p-side electrode 16 and an n-side electrode 17 of thesemiconductor light emitting device of the embodiment. FIG. 1corresponds to a cross-section taken along line A-A′ in FIG. 2A. FIG. 2Acorresponds to the drawing when viewing the second side of asemiconductor layer 15 after the removal of interconnect portions 41,43, a resin layer 25, an insulating film 18, and a reflecting film 51 inFIG. 1. FIG. 2A also corresponds to a top view of a stacked body in FIG.8B (without a substrate 10).

FIG. 2B is a schematic plan view of a mounting face (a lower face of thesemiconductor light emitting device in FIG. 1) of the semiconductorlight emitting device of the embodiment.

The semiconductor light emitting device of the embodiment is providedwith a semiconductor layer 15 including a light emitting layer 13. Thesemiconductor layer 15 includes a first side 15 a and a second side 15 bon the side opposite the first side 15 a (see FIG. 7A)

As illustrated in FIG. 8A, the second side 15 b of the semiconductorlayer 15 includes a portion (light emitting region) 15 e including thelight emitting layer 13, and a portion (non-light emitting region) 15 fnot including the light emitting layer 13. The portion 15 e includingthe light emitting layer 13 is a portion on which the light emittinglayer 13 of the semiconductor layer 15 is laminated. The portion 15 fnot including the light emitting layer 13 is a portion on which thelight emitting layer 13 of the semiconductor layer 15 is not laminated.The portion 15 e including the light emitting layer 13 represents aregion with a laminated structure capable of extracting luminescentlight from the light emitting layer 13 to the outside.

A p-side electrode 16 is provided on the second side on the portion 15 eincluding the light emitting layer 13 as a first electrode, and ann-side electrode 17 is provided on the portion 15 f not including thelight emitting layer as a second electrode.

In the example illustrated in FIG. 2A, the portion 15 f not includingthe light emitting layer 13 surrounds the portion 15 e including thelight emitting layer 13, and the n-side electrode 17 surrounds thep-side electrode 16.

Current is supplied to the light emitting layer 13 through the p-sideelectrode 16 and the n-side electrode 17, and the light emitting layer13 emits light. The light emitted from the light emitting layer 13 exitsoutside the semiconductor light emitting device from the first side 15a.

As illustrated in FIG. 1, a support 100 is provided on the second sideof the semiconductor layer 15. The support 100, provided on the secondside, supports a light emitting element including the semiconductorlayer 15, the p-side electrode 16, and the n-side electrode 17.

A fluorescent material layer 30 is provided on the first side 15 a ofthe semiconductor layer 15 as an optical layer imparting the desiredoptical properties to the light emitted from the semiconductor lightemitting device. The fluorescent material layer 30 contains a pluralityof particulate fluorescent materials 31. The fluorescent materials 31are excited by light emitted from the light emitting layer 13, and emitlight with a different wavelength from the light emitted from the lightemitting layer.

The plurality of fluorescent materials 31 is unified with a binder 32.The binder 32 is permeable with respect to light emitted from the lightemitting layer 13 and light emitted from the fluorescent materials 31.Here, “permeable” is not limited to a transmittance of 100% and mayinclude cases where a portion of the light is absorbed.

The semiconductor layer 15 includes a first semiconductor layer 11, asecond semiconductor layer 12, and the light emitting layer 13. Thelight emitting layer 13 is provided between the first semiconductorlayer 11 and the second semiconductor layer 12.

The first semiconductor layer 11 and the second semiconductor layer 12contain, for example, gallium nitride.

The first semiconductor layer 11 includes, for example, a foundationbuffer layer, and an n-type GaN layer. The second semiconductor layer 12includes, for example, a p-type GaN layer. The light emitting layer 13contains materials that emit blue, purple, indigo, ultraviolet light,and the like. The peak wavelength of light emitted from the lightemitting layer 13 is, for example, from 430 nm to 470 nm.

The second side of the semiconductor layer 15 is processed into anuneven shape. The protrusions are the portion 15 e including the lightemitting layer 13, while the recesses are the portion 15 f not includingthe light emitting layer 13. The surface of the portion 15 e includingthe light emitting layer 13 is the surface of the second semiconductorlayer 12; the p-side electrode 16 is provided on the surface of thesecond semiconductor layer 12. The surface of the portion 15 f notincluding the light emitting layer 13 is the surface of the firstsemiconductor layer 11; the n-side electrode 17 is provided on thesurface of the first semiconductor layer 11.

The area of the portion 15 e including the light emitting layer 13 onthe second side of the semiconductor layer 15 is larger than the area ofthe portion 15 f not including the light emitting layer 13. The area ofthe p-side electrode 16 provided on the surface of the portion 15 eincluding the light emitting layer 13 is larger than the area of then-side electrode 17 provided on the surface of the portion 15 f notincluding the light emitting layer 13. Hereby, a large light emittingsurface may be obtained, thus increasing the light output.

As illustrated in FIG. 2A, the n-side electrode 17 includes, forexample, four linear portions, where a contact 17 c is provided on oneof the linear portions protruding in the width direction thereof. A via22 a in an n-side interconnect layer 22 is connected to the surface ofthe contact 17 c as illustrated in FIG. 1.

As illustrated in FIG. 1, the second side of the semiconductor layer 15,the p-side electrode 16, and the n-side electrode 17 are covered with aninsulating film 18 (first insulating film). The insulating film 18 is,for example, an inorganic insulating film such as a silicon oxide film.The insulating film 18 is also provided on the side face of the lightemitting layer 13 and the side face of the second semiconductor layer12, and covers the side faces.

The insulating film 18 is also provided on the side face 15 c (the sideface of the first semiconductor layer 11) extending from the first side15 a of the semiconductor layer 15, and covers the side face 15 c.

Moreover, the insulating film 18 is provided on the outer periphery ofthe chip surrounding the side face 15 c of the semiconductor layer 15.On the first side 15 a, the insulating film 18 provided on the outerperiphery of the chip extends in a direction away from the side face 15c.

A p-side interconnect layer 21 as the first interconnect layer, and ann-side interconnect layer 22 as the second interconnect layer areprovided on the insulating film 18 on the second side so as to beseparated from each other. As illustrated in FIG. 9B, a plurality offirst openings 18 a leading to the p-side electrode 16, and secondopenings 18 b leading to the contact 17 c of the n-side electrode 17 areformed in the insulating film 18. The first openings 18 a may be alarger single opening.

The p-side interconnect layer 21 is provided on the insulating film 18and inside the first openings 18 a. The p-side interconnect layer 21 iselectrically connected to the p-side electrode 16 through vias 21 aprovided in the first openings 18 a.

The n-side interconnect layer 22 is provided on the insulating film 18and inside the second openings 18 b. The n-side interconnect layer 22 iselectrically connected to the contact 17 c of the n-side electrode 17through the via 22 a provided inside the second opening 18 b.

The p-side interconnect layer 21 and the n-side interconnect layer 22account for a majority of the second-side region and spreads out overthe insulating film 18. The p-side interconnect layer 21 is connected tothe p-side electrode 16 through the plurality of vias 21 a.

Additionally, the reflecting film 51 covers the side face 15 c of thesemiconductor layer 15 with the insulating film 18 interposedtherebetween. The reflecting film 51 is neither in contact with the sideface 15 c, nor electrically connected to the semiconductor layer 15. Thereflecting film 51 is separated from the p-side interconnect layer 21and the n-side interconnect layer 22. The reflecting film 51 isreflective with respect to light emitted from the light emitting layer13 and light emitted from the fluorescent materials 31.

As illustrated in FIG. 10A, the reflecting film 51, the p-sideinterconnect layer 21, and the n-side interconnect layer 22 include acopper film that is, for example, simultaneously formed via plating ontoa shared metal film 60.

The copper film constituting the reflecting film 51, the p-sideinterconnect layer 21, and the n-side interconnect layer 22 may bedeposited via plating onto a metal film 60 formed on the insulating film18. The thicknesses of the reflecting film 51, the p-side interconnectlayer 21, and the n-side interconnect layer 22 are thicker than thethickness of the metal film 60, respectively.

The metal film 60 includes a metal foundation film 61, an adhesion layer62, and a seed layer 63 consecutively laminated in that order from theinsulating film 18 side.

The metal foundation film 61 is, for example, an aluminum film, which ishighly reflective with respect to light emitted from the light emittinglayer 13.

The seed layer 63 is a copper film used for extracting copper duringplating. The adhesion layer 62 is, for example, a titanium film, whichpossesses excellent wettability with respect to both aluminum andcopper.

The reflecting film 51 may be formed on the metal film 60 at the outerperiphery of the chip, adjacent to the side face 15 c of thesemiconductor layer 15, without depositing a film (copper film) on themetal film 60. Inclusion of at least an aluminum film 61, ensures thatthe reflecting film 51 is highly reflective with respect to lightemitted from the light emitting layer 13 and light emitted from thefluorescent materials 31.

Additionally, the metal foundation film (aluminum film) 61 remainsbeneath the p-side interconnect layer 21 and n-side interconnect layer22, and therefore the aluminum film 61 is formed spreading out over alarge region on the second side. Hereby, it is possible to significantlyincrease the amount of light oriented toward the fluorescent materiallayer 30 side.

A p-side metal pillar 23 is provided on the p-side interconnect layer 21as a first metal pillar on a surface opposite the semiconductor layer15. The p-side interconnect layer 21 and the p-side metal pillar 23 forma p-side interconnect portion (a first interconnect portion) 41.

An n-side metal pillar 24 is provided on the n-side interconnect layer22 as a second metal pillar on a surface opposite the semiconductorlayer 15. The n-side interconnect layer 22 and the n-side metal pillar24 form an n-side interconnect portion (a second interconnect portion)43.

A resin layer 25 is provided between the p-side interconnect portion 41and the n-side interconnect portion 43 as a second insulating film. Theresin layer 25 is provided between the p-side metal pillar 23 and then-side metal pillar 24 so as to be in contact with the side face of thep-side metal pillar 23 and the side face of the n-side metal pillar 24.That is, the resin layer 25 fills between the p-side metal pillar 23 andthe n-side metal pillar 24.

The resin layer 25 is also provided between the p-side interconnectlayer 21 and the n-side interconnect layer 22, between the p-sideinterconnect layer 21 and the reflecting film 51, and between the n-sideinterconnect layer 22 and the reflecting film 51.

The resin layer 25 is provided on the periphery of the p-side metalpillar 23 and the periphery of the n-side metal pillar 24, and coversthe side face of the p-side metal pillar 23 and the side face of then-side metal pillar 24.

The resin layer 25 is also provided on the outer periphery of the chipadjacent to the side face 15 c of the semiconductor layer 15 and coversthe reflecting film 51.

The end portion (surface) of the p-side metal pillar 23 opposite thep-side interconnect layer 21 is exposed through the resin layer 25 tofunction as a p-side external terminal 23 a connectable to an externalcircuit such as a mounting substrate and the like. The end portion(surface) of the n-side metal pillar 24 opposite the n-side interconnectlayer 22 is exposed through the resin layer 25 to function as an n-sideexternal terminal 24 a connectable to an external circuit such as amounting substrate and the like. The p-side external terminal 23 a andthe n-side external terminal 24 a may be joined to land patterns on themounting substrate through, for instance, solder or a conductivejointing material.

As illustrated in FIG. 2B, the p-side external terminal 23 a and then-side external terminal 24 a are formed aligned in the same plane ofthe resin layer 25 so as to be separated from each other. The p-sideexternal terminal 23 a may be formed into rectangular, and the n-sideexternal terminal 24 a may be formed as a rectangle of the same sizewith two notched corners of the same size as the rectangle of the p-sideexternal terminal 23 a. Thereby, it is possible to distinguish thepolarities of the external terminals. Naturally, the n-side externalterminal 24 a may be made into rectangular while the p-side externalterminal 23 a may be shaped as a rectangle with two notched corners.

The gap between the p-side external terminal 23 a and the n-sideexternal terminal 24 a is wider than the gap between the p-sideinterconnect layer 21 and the n-side interconnect layer 22 on theinsulating film 18. The gap between the p-side external terminal 23 aand the n-side external terminal 24 a is larger than the solder spreadduring mounting. Thereby, it is possible to prevent a short-circuitbetween the p-side external terminal 23 a and the n-side externalterminal 24 a through the solder.

In contrast, it is possible to reduce the gap between the p-sideinterconnect layer 21 and the n-side interconnect layer 22 to as much asallowable by limits on processing. Consequently, it is possible toincrease the area of the p-side interconnect layer 21, and the contactarea between the p-side interconnect layer 21 and the p-side metalpillar 23. It is thus possible to expedite the diffusion of heat fromthe light emitting layer 13.

The area of the p-side interconnect layer 21 in contact with the p-sideelectrode 16 through the plurality of vias 21 a is larger than the areaof the n-side interconnect layer 22 in contact with the n-side electrode17 through the via 22 a. Therefore, it is possible to equalize thecurrent distribution flowing through the light emitting layer 13.

The area of the n-side interconnect layer 22 spreading out over theinsulating film 18 may be made larger than the area of the n-sideelectrode 17. Additionally, the area of the n-side metal pillar 24 (thearea of the n-side external terminal 24 a) provided on the n-sideinterconnect layer 22 may be made larger than the n-side electrode 17.Thereby, it is possible to secure the area of an n-side externalterminal 24 a sufficient for highly reliable mounting while reducing thearea of the n-side electrode 17. That is, it is possible to reduce thearea of the portion 15 f (the non-light emitting region) not includingthe light emitting layer 13 of the semiconductor layer 15 and increasethe area of the portion 15 e (the light emitting region) including thelight emitting layer 13 to improve light output.

The first semiconductor layer 11 is electrically connected to the n-sidemetal pillar 24 via the n-side electrode 17 and the n-side interconnectlayer 22. The second semiconductor layer 12 is electrically connected tothe p-side metal pillar 23 via the p-side electrode 16 and the p-sideinterconnect layer 21.

The thickness of the p-side metal pillar 23 (the thickness in thedirection connecting the p-side interconnect layer 21 and the p-sideexternal terminal 23 a) is thicker than the thickness of the p-sideinterconnect layer 21. The thickness of the n-side metal pillar 24(thickness in the direction connecting the n-side interconnect layer 22and the n-side external terminal 24 a) is thicker than the thickness ofthe n-side interconnect layer 22. The thicknesses of the p-side metalpillar 23, the n-side metal pillar 24, and the resin layer 25 arethicker than the thickness of the semiconductor layer 15, respectively.

The aspect ratio (ratio of the planar size to the thickness) of themetal pillars 23, 24 may be 1 or greater, or less than 1. That is, themetal pillars 23, 24 may be thicker, or thinner than the planar sizesthereof.

The thickness of the support 100 including the p-side interconnect layer21, the n-side interconnect layer 22, the p-side metal pillar 23, then-side metal pillar 24, and the resin layer 25 may be thicker than thethickness of the light emitting element (LED chip) including thesemiconductor layer 15, the p-side electrode 16, and the n-sideelectrode 17.

The semiconductor layer 15 is formed on the substrate using an epitaxialgrowth method, as described below. The substrate is removed after thesupport 100 is formed thereon, and the semiconductor layer 15 does notinclude the substrate on the first side 15 a. The semiconductor layer 15is not supported by the rigid sheet-like substrate, but is rathersupported by the support 100 comprised of a composite of the metalpillars 23, 24 and the resin layer 25.

For instance, copper, gold, nickel, silver, and the like may be used asthe material in the p-side interconnect portion 41 and the n-sideinterconnect portion 43. Among these, copper provides favorable thermalconductivity, increased migration resistance, and improved adhesion withrespect to the insulating material.

The resin layer 25 reinforces the p-side metal pillar 23 and the n-sidemetal pillar 24. It is desirable to use a resin layer 25 that has nearlythe same or the same coefficient of thermal expansion as the mountingsubstrate. Examples of such a resin layer 25 include a resin containingprimarily epoxy resin, a resin containing primarily silicone resin, or aresin containing primarily fluororesin.

Additionally, the resin used as the base for the resin layer 25 containslight shielding material (a light absorbing agent, a light reflectingagent, a light scattering agent, or the like); furthermore, the resinlayer 25 possesses light shielding properties with respect to theluminescent light from the light emitting layer 13. Hereby, it ispossible to prevent light from leaking from the side face of the support100 and from the mounting face side.

Due to the thermal cycle while mounting the semiconductor light emittingdevice, stress caused by the solder joining the p-side external terminal23 a and the n-side external terminal 24 a to the lands on the mountingsubstrate is applied to the semiconductor layer 15. The p-side metalpillar 23, the n-side metal pillar 24 and the resin layer 25 absorb andrelax that stress. Using the resin layer 25 in particular, which is moreflexible than the semiconductor layer 15, as a portion of the support100 may increase the stress relaxation effects.

The reflecting film 51 is separated from the p-side interconnect portion41 and the n-side interconnect portion 43. Therefore, the stress appliedto the p-side metal pillar 23 and the n-side metal pillar 24 duringmounting is not transmitted to the reflecting film 51. Accordingly, itis possible to suppress peeling of the reflecting film 51. This alsoprevents stress from being applied to the side face 15 c side of thesemiconductor layer 15.

As is later described, the substrate used in forming the semiconductorlayer 15 is removed from the semiconductor layer 15. Hereby, thesemiconductor light emitting device is given a low profile. It is alsopossible to form minute recesses and protrusions on the first side 15 aof the semiconductor layer 15, improving the light-extraction efficiencythereof.

For example, the first side 15 a may be wet etched using an alkalinesolution to form the minute recesses and protrusions thereon. Thereby,the total reflection component at the first side 15 a decreases and thelight-extraction efficiency thereof can be improved.

After removing the substrate, the fluorescent material layer 30 isformed via an insulating film 19 on the first side 15 a. The insulatingfilm 19 functions as an adhesion layer for increasing the adhesionbetween the semiconductor layer 15 and the fluorescent material layer30; for instance, the insulating film 19 may be an inorganic insulatingfilm such as a silicon oxide film or a silicon nitride film. Theinsulating film 19 is formed along the recesses and protrusions on thefirst side 15 a of the semiconductor layer 15 and covers the recessesand protrusions conformally.

The fluorescent material layer 30 has a structure in which a pluralityof particulate fluorescent materials 31 is dispersed throughout a binder32. For instance, a silicone resin may be used as the binder 32.

The fluorescent material layer 30 is also formed on the outer peripheryof the chip surrounding the side face 15 c of the semiconductor layer15. Accordingly, the fluorescent material layer 30 has a larger planarsize than the semiconductor layer 15. The fluorescent material layer 30is provided on the insulating film 18 (for example, a silicon oxidefilm) at the outer periphery of the chip.

The fluorescent material layer 30 is limited to the first side 15 a ofthe semiconductor layer 15 and the region adjacent to the side face 15 cof the semiconductor layer 15; the fluorescent material layer 30 is notformed on the second side of the semiconductor layer 15, at theperiphery of the metal pillars 23, 24, or the side faces of the support100. The side face of the fluorescent material layer 30 and the sideface of the support 100 (the side face of the resin layer 25) are flush.

Namely, the semiconductor light emitting device of the embodiment is anextremely small semiconductor light emitting device with a chip-sizedpackage structure. Therefore, this increases the flexibility of lightingdesign when adopting the semiconductor light emitting device in a lamp,for example.

Additionally, because the fluorescent material layer 30 is not providedin excess on the mounting face side from which light is not extracted tothe outside, cost can be reduced. Furthermore, even if there is nosubstrate on the first side 15 a, it is possible to dissipate heat fromthe light emitting layer 13 toward the mounting substrate side via thep-side interconnect layer 21 and the n-side interconnect layer 22 whichare spread out over the second side; thus, the device may be small whilehaving excellent heat dissipation properties.

In typical flip-chip mounting, a fluorescent material layer is formed soas to cover the entire chip after mounting the LED chip on the mountingsubstrate via bumps and the like. Alternatively, a resin is used forunder filling between the bumps.

In contrast, according to the embodiment, a resin layer 25 differentfrom the fluorescent material layer 30 is provided at the periphery ofthe p-side metal pillar 23 and the periphery of the n-side metal pillar24 before mounting, in order to imbue the mounting face side withproperties suited for stress relaxation. Additionally, because the resinlayer 25 is already provided on the mounting face side, there is no needfor under filling after mounting.

The first side 15 a is provided with a layer designed with excellentlight-extraction efficiency, color conversion efficiency, distributionof luminous intensity and the like, while the mounting face side isprovided with a layer designed with excellent stress relaxationproperties during mounting, and with properties allowing the layer toact as a support in place of a substrate. For example, the resin layer25 is constituted of a base resin densely filled with a filler of silicaparticles and the like, and is adjusted to a hardness suitable for asupport.

The light emitted from the light emitting layer 13 to the first side 15a incidents on the fluorescent material layer 30; a portion of thatlight excites the fluorescent materials 31 and light from the lightemitting layer 30 and from the fluorescent materials 31 are combinedinto, for example, white light.

If a substrate is provided on the first side 15 a, then light emittedfrom the light emitting layer 13 does not incident on the fluorescentmaterial layer 30, thus creating light that leaks outside from the sideface of the substrate. In other words, light from the light emittinglayer 13 with a strong tinge leaks from the side face of the substrate,this leads to color breakup or uneven color such as a ring of blue lightat the periphery when the fluorescent material layer 30 is viewed fromabove.

Whereas, according to this embodiment, given that there is no substratebetween the first side 15 a and the fluorescent material layer 30, it ispossible to prevent color breakup and uneven color due to the leakage oflight with a strong tinge from the light emitting layer 13 from thesubstrate side face.

Moreover, according to the embodiment, the reflecting film 51 isprovided on the side face 15 c of the semiconductor layer 15 via theinsulating film 18. Light heading toward the side face 15 c of thesemiconductor layer 15 from the light emitting layer 13 is reflected bythe reflecting film 51 and does not leak outside. Therefore, coupledwith the absence of a substrate on the first side 15 a, it is possibleto prevent color breakup and uneven color due to the light leakage fromthe side face side of the semiconductor light emitting device.

The side face 15 c of the semiconductor layer 15 on which the reflectingfilm 51 is provided is inclined with respect to (the flat portion of)the first side 15 a. The side face 15 c is also inclined with respect tothe second side 15 b. Accordingly, the reflecting surface provided onthe side face is inclined with respect to the first side 15 a and thesecond side 15 b. A line extending from the side face 15 c is inclined,and forms an obtuse angle with the interface between the fluorescentmaterial layer 30 and the insulating film 18.

The insulating film 18 provided between the reflecting film 51 and theside face 15 c of the semiconductor layer 15 prevents metal contained inthe reflecting film 51 from diffusing into the semiconductor layer 15.Thereby, it is possible to prevent metal pollution of, for example, theGaN in the semiconductor layer 15, and prevent deterioration of thesemiconductor layer 15.

Furthermore, the insulating film 18 provided between the reflecting film51 and the fluorescent material layer 30, and between the resin layer 25and the fluorescent material layer 30 increases the adhesion between thereflecting film 51 and the fluorescent material layer 30, and theadhesion between the resin layer 25 and the fluorescent material layer30.

The insulating film 18 is, for example, an inorganic insulating filmsuch as a silicon oxide film, a silicon nitride film, or the like. Thatis, the first side 15 a and the second side of the semiconductor layer15, the side face 15 c of the first semiconductor layer 11, the sideface of the second semiconductor layer 12, and the side face of thelight emitting layer 13 are covered with an inorganic insulating film.The inorganic insulating film surrounds the semiconductor layer 15 toshield the semiconductor layer 15 from metal, moisture, and the like.

FIG. 3A is a schematic cross-sectional view illustrating the vicinity ofthe first side 15 a of the semiconductor light emitting device of theembodiment. The insulating film (adhesion film) 19 between the firstside 15 a and the fluorescent material layer 30 illustrated in FIG. 1 isomitted from FIG. 3A.

According to the embodiment, the first side 15 a on the side opposite anelectrode forming face on the semiconductor layer 15, is an externallight extraction surface; the first side 15 a is roughened to increasethe light-extraction efficiency thereof. In other words, recesses andprotrusions including a plurality of protrusions 71 and a plurality ofrecesses 72 are formed on the first side 15 a.

Here, FIG. 3B is a schematic cross-sectional view illustrating thevicinity of the first side 15 a in a semiconductor light emitting deviceof a reference example.

In the reference example illustrated in FIG. 3B, the peaks of theprotrusions 71 on the roughened first side 15 a protrude to the upperface side of the fluorescent material layer 30 than the interfacebetween the insulating film 18 and the fluorescent material layer 30 atthe outer periphery of the chip. As schematically illustrated by anarrow in FIG. 3B, this construction facilitates creating a lightcomponent oriented toward the end portion of the chip (the side face ofthe fluorescent material layer 30), reduces the light component orientedupward (the upper face of the fluorescent material layer 30), andreduces the amount of light extracted from above (the upper face of thefluorescent material layer 30).

Whereas, according to the embodiment, as illustrated in FIG. 3A, thepeak of the protrusion 71 is positioned closer to the second side of thesemiconductor layer 15 than the end (the lower end in FIGS. 1, 3A) onthe resin layer 25 side on the fluorescent material layer 30 at theouter periphery of the chip. All of the peaks of the protrusions 71formed on the roughened first side 15 a are positioned closer to thesecond side of the semiconductor layer 15 than the interface between thefluorescent material layer 30 and the insulating film 18. The peaks ofprotrusions 71 are positioned closer to the second side than theinterface between the fluorescent material layer 30 and the insulatingfilm 18 on the outer periphery of the chip by not less than 1 μm. Theprotrusions 71 on the roughened face do not protrude to the upper faceside of the fluorescent material layer 30 than the interface between thefluorescent material layer 30 and the insulating film 18 at the outerperiphery of the chip.

Therefore, according to the embodiment, as schematically illustrated bythe arrow in FIG. 3A, the light oriented toward the end of the chip isreflected by the reflecting film 51 at the side face of the chip, andincrease the light component oriented upward (upper face of thefluorescent material layer 30), more so than the reference example. Thisimproves the brightness of the light emitted from the upper face of thefluorescent material layer 30 to the outside.

Additionally, according to the embodiment, the side face 15 c of thesemiconductor layer 15 on which the reflecting film 51 is provided isinclined as previously described; therefore, it tends to be easier toreflect the light oriented toward the end portion of the chip upwardcompared to a case where the side face 15 c is perpendicular to thefirst side 15 a and the second side.

FIG. 4A illustrates a distribution of luminous intensity for thesemiconductor light emitting device 1 of the embodiment; FIG. 4Billustrates the distribution of luminous intensity for a semiconductorlight emitting device 200 of the reference example.

According to the embodiment illustrated in FIG. 4A, the light hasimproved directionality compared to the reference example illustrated inFIG. 4B. That is, according to the embodiment, it is possible to preventthe loss of the light emitted horizontally or obliquely from the firstside 15 a, and achieve highly bright and highly directional lightextraction.

Moreover, in the construction of the embodiment is such that for theconfiguration in which the reflecting film 51 is not provided on theside face, the light oriented toward the end portion of the chip isabsorbed by the resin layer 25. Accordingly, it is possible to preventuneven color due to the light leakage from the end portion of the chipthat does not travel through the fluorescent material layer 30 (lightwith an intense blue color, for instance).

Next, a method of manufacturing the semiconductor light emitting deviceis described with reference to FIGS. 7A to 13B.

As illustrated in FIG. 7A, the first semiconductor layer 11, the lightemitting layer 13, and the second semiconductor layer 12 are epitaxiallygrown in that order on the major surface side of the substrate 10 by,for example, a metal organic chemical vapor deposition (MOCVD).

In the semiconductor layer 15, the substrate 10 side is the first side15 a, and the opposite side of the substrate 10 is the second side 15 b.

The substrate 10 is, for example, a silicon substrate. Alternatively,the substrate 10 may be a sapphire substrate. The semiconductor layer 15is a nitride semiconductor layer containing, for example, galliumnitride (GaN).

The first semiconductor layer 11 includes, for example, a buffer layerprovided on the major surface side of the substrate 10, and an n-typeGaN layer provided on the buffer layer. The second semiconductor layer12 includes, for example, a p-type AlGaN layer provided on the lightemitting layer 13, and a p-type GaN layer provided thereon. The lightemitting layer 13 has, for example, a multiple quantum well (MQW)structure.

FIG. 7B illustrates the state in which the second semiconductor layer 12and the light emitting layer 13 are selectively removed. For instance,the second semiconductor layer 12 and the light emitting layer 13 areselectively etched using a reactive ion etching (RIE) to expose thefirst semiconductor layer 11.

Next, as illustrated in FIG. 8A, the first semiconductor layer 11 isselectively removed to form grooves 90. The semiconductor layer 15 isdivided into a plurality of segments on the major surface side of thesubstrate 10 by the grooves 90. The grooves 90 are formed as, forexample, a lattice pattern on the substrate 10 in the wafer state.

The grooves 90 pass through the semiconductor layer 15 and reach thesubstrate 10. At this time, by controlling etching parameters such asthe etching time and the like, the major surface of the substrate 10 issuperficially etched, so the bottom faces of the grooves 90 retreatfarther below than the interface between the substrate 10 and thesemiconductor layer 15. The grooves 90 may be formed after forming thep-side electrode 16 and the n-side electrode 17.

Next, as illustrated in FIG. 8B, the p-side electrode 16 is formed onthe surface of the second semiconductor layer 12. The n-side electrode17 is also formed on the surface of the first semiconductor layer 11 onthe region in which the second semiconductor layer 12 and the lightemitting layer 13 are selectively removed.

The p-side electrode 16, which is formed in the region whereon the lightemitting layer 13 is laminated, includes a reflecting film that reflectsthe light emitted from the light emitting layer 13. For example, thep-side electrode 16 contains silver, silver alloy, aluminum, aluminumalloy, and the like. To prevent the sulfuration or oxidation of thereflecting film, the p-side electrode 16 also includes a metalprotective film (barrier metal).

Next, as illustrated in FIG. 9A, the insulating film 18 is formed so asto cover the stacked body provided on the substrate 10. The insulatingfilm 18 covers the second side of the semiconductor layer 15, the p-sideelectrode 16, and the n-side electrode 17. The insulating film 18 alsocovers the side face 15 c which extends from the first side 15 a of thesemiconductor layer 15. The insulating film 18 is further formed on thesurface of the substrate 10 in the bottom face of the grooves 90.

The insulating film 18 is a silicon oxide film or a silicon nitride filmformed using a chemical vapor deposition (CVD), for example. Forinstance, the first openings 18 a and the second openings 18 b are wetetched using a resist mask in the insulating film 18 as illustrated inFIG. 9B. The first openings 18 a reach the p-side electrode 16 and thesecond openings 18 b reach the contact 17 c of the n-side electrode 17.

Next, as illustrated in FIG. 9B, the metal film 60 is formed on thesurface of the insulating film 18, the inner walls (side walls andbottom faces) of the first openings 18 a, and the inner walls (sidewalls and bottom faces) of the second openings 18 b. The metal film 60includes, for example, an aluminum film 61, a titanium film 62, and acopper film 63 as illustrated in FIG. 10A. The metal film 60 is formed,for example, using sputtering, and the like.

After selectively forming a resist mask 91 illustrated in FIG. 10B onthe metal film 60, the p-side interconnect layer 21, the n-sideinterconnect layer 22, and the reflecting film 51 are formed by copperelectroplating, with the copper film 63 in the metal film 60 as a seedlayer.

The p-side interconnect layer 21 is also formed in the first openings 18a and is electrically connected to the p-side electrode 16. The n-sideinterconnect layer 22 is also formed in the second openings 18 b and iselectrically connected to the contact 17 c of the n-side electrode 17.

Next, the resist mask 91 is removed using, for example, a solvent oroxygen plasma; thereafter, the resist mask 92 illustrated in FIG. 11A isselectively formed. Alternatively, the resist mask 92 may be formedwithout removing the resist mask 91.

After forming the resist mask 92, the p-side metal pillar 23 and then-side metal pillar 24 are copper electroplated using the p-sideinterconnect layer 21 and the n-side interconnect layer 22 as a seedlayer.

The p-side metal pillar 23 is formed on the p-side interconnect layer21. The p-side interconnect layer 21 is integrated with the p-side metalpillar 23 with the same copper material. The n-side metal pillar 24 isformed on the n-side interconnect layer 22. The n-side interconnectlayer 22 is integrated with the n-side metal pillar 24 with the samecopper material.

The resist mask 92 is removed using, for example, a solvent or oxygenplasma. At this point, the p-side interconnect layer 21 and the n-sideinterconnect layer 22 are connected through the metal film 60. Thep-side interconnect layer 21 and the reflecting film 51 are alsoconnected through the metal film 60, and the n-side interconnect layer22 and the reflecting film 51 are also connected through the metal film60.

With that, the metal film 60 between the p-side interconnect layer 21and the n-side interconnect layer 22, the metal film 60 between thep-side interconnect layer 21 and the reflecting film 51, and the metalfilm 60 between the n-side interconnect layer 22 and the reflecting film51 are all removed by way of etching.

Hereby, the electrical connections via the metal film 60 between thep-side interconnect layer 21 and the n-side interconnect layer 22,between the p-side interconnect layer 21 and the reflecting film 51, andbetween the n-side interconnect layer 22 and the reflecting film 51 areall respectively separated (FIG. 11B).

Next, the resin layer 25 illustrated in FIG. 12A is formed on thestructure illustrated in FIG. 11B. The resin layer 25 covers the p-sideinterconnect portion 41 and the n-side interconnect portion 43. Theresin layer 25 also covers the reflecting film 51.

The resin layer 25 constitutes the support 100 with the p-sideinterconnect portion 41 and the n-side interconnect portion 43. Thesubstrate 10 is removed while the semiconductor layer 15 is supported bythe support 100.

For instance, the substrate 10 which is a silicon substrate is removedusing a dry etching such as RIE. Alternatively, the silicon substrate 10may be removed by way of wet etching. Furthermore, if the substrate 10is a sapphire substrate, the substrate 10 may be removed using a laserliftoff process.

There are cases where the semiconductor layer 15 epitaxially grown ontothe substrate 10 may be subject to large internal stresses. Furthermore,the p-side metal pillar 23, the n-side metal pillar 24, and the resinlayer 25 are a more flexible material compared to the semiconductorlayer 15 of a GaN based material. Accordingly, even if the internalstresses created during epitaxial growth are released all at once whenthe substrate 10 is peeled off, the p-side metal pillar 23, the n-sidemetal pillar 24, and the resin layer 25 absorb the stress. Consequently,it is possible to avoid breaking the semiconductor layer 15 during theprocess of removing the substrate 10.

Removal of the substrate 10 exposes the first side 15 a of thesemiconductor layer 15. The exposed first side 15 a is roughened(frosted) to form minute recesses and protrusions thereon. For instance,the first side 15 a is wet etched with a potassium hydroxide (KOH)aqueous solution, tetramethyl ammonium hydroxide (TMAH), and the like. Adifference in etching speed depending on the crystal plane orientationoccurs during etching. Thus, it is possible to form recesses andprotrusions on the first side 15 a. Forming minute recesses andprotrusions on the first side 15 a improves the light-extractionefficiency of the light emitted from the light emitting layer 13.

The fluorescent material layer 30 is formed on the first side 15 a viathe insulating film 19 as illustrated in FIG. 13A. The fluorescentmaterial layer 30 is formed by a method such as printing, potting,molding or compression molding. The insulating film 19 increases theadhesion between the semiconductor layer 15 and the fluorescent materiallayer 30

Additionally, a sintered fluorescent material obtained by sintering afluorescent material via a binder may be adhered to the fluorescentmaterial layer 30 via the insulating film 19 as the fluorescent materiallayer 30.

The fluorescent material layer 30 is also formed on the regionsurrounding the side face 15 c of the semiconductor layer 15. The resinlayer 25 is also provided on the region surrounding the side face 15 cof the semiconductor layer 15. The fluorescent material layer 30 isformed on the resin layer 25 via the insulating film 18.

After forming the fluorescent material layer 30, the surface of theresin layer 25 (the lower face in FIG. 13A) is ground and the p-sidemetal pillar 23 and the n-side metal pillar 24 are exposed through theresin layer 25 as illustrated in FIG. 13B. The exposed surface of thep-side metal pillar 23 is the p-side external terminal 23 a, and theexposed surface of the n-side metal pillar 24 is the n-side externalterminal 24 a.

Subsequently, the structure illustrated in FIG. 13B is cut at the regionin which the above-described grooves 90 divide the plurality ofsemiconductor layers 15 into a plurality of segments. Namely, thefluorescent material layer 30, the insulating film 18, and the resinlayer 25 are cut. The semiconductor layer 15 is not present in thedicing region, so the semiconductor layer 15 is not damaged by dicing.

The previously described processes before the wafer is separated intoindividual pieces are carried out on a wafer including multiplesemiconductor layers 15. The wafer is separated into an individual pieceas a semiconductor light emitting device including at least onesemiconductor layer 15. The semiconductor light emitting device may be asingle chip structure including a single semiconductor layer 15, or maybe a multi-chip structure including a plurality of semiconductor layers15.

Because the previously described processes before the wafer is separatedinto individual pieces are carried out in a wafer form all at once,there is no need to form the interconnect layer, form the pillars,package using the resin layer, and form the fluorescent material layeron each individual piece of devices, and the cost of manufacture can bedrastically reduced.

The support 100 and fluorescent material layer 30 are formed in thewafer form and then cut, and therefore the side faces of the fluorescentmaterial layer 30 and the support 100 (resin layer 25) are flush andform the side face of a semiconductor light emitting device separatedout into an individual piece. Accordingly, coupled with the absence ofthe substrate 10, it is possible to provide a small semiconductor lightemitting device with a chip-sized package structure.

According to the embodiment, as illustrated in FIG. 3A, the first side15 a is roughened, and recesses and protrusions including a plurality ofprotrusions 71 and a plurality of recesses 72 are formed on the firstside 15 a. Furthermore, according to the embodiment, establishing andcontrolling suitable etching parameters mixes protrusions of differentheights to create a roughened surface with few flat portions.

If there is a large number of flat portions, the reflection component atthe first side 15 A increases. Light reflected by the first side 15 aand returning to the inside of the semiconductor layer 15 is repeatedlyreflected inside the semiconductor layer 15, is dampened, and, as aresult, reduces the light-extraction efficiency to the outside.Therefore, although it is desired to densely form recesses andprotrusions on the first side 15 a, having only uniform protrusions ofthe same size leads to a large number of flat portions remaining on thefirst side 15 a depending on the size. For example, having only tallprotrusions with long inclined surfaces tends to create gaps betweenadjacent protrusions, and facilitates increasing the area of the flatportions.

Whereas, according to the embodiment, the plurality of protrusions 71includes first protrusions 71 a, and second protrusions 71 b shorterthan the first protrusions 71 a. The relatively shorter secondprotrusions 71 b surround the regions between the relatively tallerfirst protrusions 71 a. Thus, the density of the protrusions on thefirst side 15 a increases, reducing the area of the relatively flatportions, and increasing the light-extraction efficiency. Additionally,the increased density of the recesses and protrusions also increases thesurface area of the first side 15 a to further increase the amount oflight extraction.

FIG. 5 is a laser microscope image of the first side 15 a in thesemiconductor light emitting device of the embodiment.

FIG. 6 is an electron microscope image of a cross-section in thevicinity of the first side 15 a of the semiconductor light emittingdevice of the embodiment.

FIGS. 5 and 6 show a GaN surface (cross-section) treated with a 5%concentration of tetramethyl ammonium hydroxide (TMAH) aqueous solutionfor 20 minutes at 60° C.

The relatively darker portions in FIG. 5 are the flat portions. Thedensity of the recesses and protrusions in FIG. 5 was 97.81%. Namely,the area ratio of the flat portions is 100−97.81=2.19%.

To achieve a high light-extraction efficiency, it is desirable that thearea ratio of the flat portions is not more than 20%. It is alsodesirable that the height (h1) of the relatively taller firstprotrusions in FIG. 6 is not less than 0.8 μm; furthermore, it isdesirable that the height h1 of the first protrusions is not less thantwo times the height h2 to of the second protrusions which is shorterthan the first protrusions.

Here, when in cross-sectional view, the protrusion approaches anisosceles triangle where two of the inclined sides includes a longinclined side, or approaches an equilateral triangle, the height of theprotrusion represents the height of the triangle.

FIG. 14 illustrates the schematic cross-sectional view of the vicinityof the first side 15 a on the semiconductor light emitting device ofanother embodiment.

According to the configuration in FIG. 14, the entire first side 15 a ofthe semiconductor layer 15 is curved. More specifically, the first side15 a is curved so that the region closer to the center than the outerperiphery of the chip on the first side 15 a forms a crater in thesecond side.

Forming recesses and protrusions on the first side 15 a in theconfiguration in FIG. 14 increases the surface area and improves thelight-extraction efficiency. However, there is a limit on how much theshape of the recesses and protrusions (height, angle, or the like) canincrease the surface area.

Therefore, curving the roughened first side 15 a increases the surfacearea compared to when the first side is formed into a planar shape, and,as a result, the light-extraction efficiency improves.

For example, suitably controlling the stress on the resin layer 25 maycurve the first side 15 a. The stress on the resin layer 25 can becontrolled in accordance with the resin material, the amount of fillercontained therein, the hardness thereof, and the like.

Additionally, in the embodiment illustrated in FIG. 14, the peaks of allthe protrusions formed on the roughened first side 15 a is positionedcloser to the second side of the semiconductor layer 15 than theinterface between the fluorescent material layer 30 and the insulatingfilm 18. Therefore, the light oriented toward the end portion of thechip is reflected by the reflecting film 51 at the side face of the chipand the light component oriented upward (the upper face side of thefluorescent material layer 30) can be increased compared to thereference example. This improves the brightness of the light emittedfrom the upper face of the fluorescent material layer 30 to the outside.

Moreover, the plurality of protrusions includes first protrusions andsecond protrusions shorter than the first protrusions. The regionsbetween the relatively taller first protrusions are surrounded by therelatively shorter second protrusions. Thus, the density of theprotrusions on the first side 15 a reduces the area of the relativelyflat portions and the light-extraction efficiency can be increased.Additionally, the increased density of the recesses and protrusions alsoincreases the surface area of the first side 15 a to further increasethe amount of light extraction.

In the previously described embodiments, the optical layer provided tothe first side 15 a of the semiconductor layer 15 is not limited to afluorescent material layer, and may be a scattering layer. Thescattering layer may include a plurality of particulate scatteringmaterials (a titanium compound, for example) for scattering the lightemitted from the light emitting layer 13, and a binder (a resin layer,for example) that unifies the plurality of particulate scatteringmaterials and is permeable to the light emitted from the light emittinglayer 13.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor light emitting device,comprising: a semiconductor layer including a first side, a second sideopposite to the first side, and a light emitting layer; a firstelectrode provided on the semiconductor layer on the second side; asecond electrode provided on the semiconductor layer on the second side;a first insulating film provided on the second side; a firstinterconnect portion provided on the first insulating film and connectedto the first electrode; a second interconnect portion provided on thefirst insulating film and connected to the second electrode; a secondinsulating film including a first portion provided between the firstinterconnect portion and the second interconnect portion, and includinga second portion provided outside of a side face of the semiconductorlayer; an optical layer provided on the first side and on the secondportion of the second insulating film, the optical layer beingtransmissive with respect to light emitted from the light emittinglayer, and a reflecting film provided on the side face of thesemiconductor layer via the first insulating film, a plurality ofprotrusions and a plurality of recesses being provided at the firstside, and peaks of all the protrusions being positioned closer to thesecond side than an upper surface of the second portion of the secondinsulating film, the peaks of all the protrusions being adjacent to thesecond insulating film via the reflecting film.
 2. The device accordingto claim 1, wherein the peaks of all the protrusions are positionedcloser to the second side than a surface, which faces to the uppersurface of the second portion of the second insulating film, of theoptical layer by not less than 1 μm.
 3. The device according to claim 1,wherein the protrusions include first protrusions and second protrusionsshorter than the first protrusions.
 4. The device according to claim 1,wherein the first side is curved, and a center region of the first sidesinks in toward the second side than an outer periphery region of thefirst side.
 5. The device according to claim 1, wherein the firstinsulating film is also provided on a side face extending from the firstside of the semiconductor layer.
 6. The device according to claim 5,wherein the side face of the semiconductor layer is inclined withrespect to the first side and the second side.
 7. The device accordingto claim 1, wherein the reflecting film includes an aluminum film. 8.The device according to claim 1, wherein the second insulating filmcovers the reflecting film.
 9. The device according to claim 1, whereinthe first interconnect portion includes a first interconnect layerprovided on the first insulating film, and a first metal pillar providedon the first interconnect layer, the first metal pillar being thickerthan the first interconnect layer, and the second interconnect portionincludes a second interconnect layer provided on the first insulatingfilm, and a second metal pillar provided on the second interconnectlayer, the second metal pillar being thicker than the secondinterconnect layer.
 10. The device according to claim 9, wherein thefirst interconnect layer and the second interconnect layer include analuminum film.
 11. The device according to claim 1, wherein the opticallayer is a fluorescent material layer including: a plurality offluorescent materials excited by the light emitted from the lightemitting layer and emitting a light having a different wavelength fromthe light emitted from the light emitting layer; and a binder bindingthe plurality of fluorescent materials, the binder being transmissivewith respect to the light emitted from the light emitting layer andlight emitted from the fluorescent materials.
 12. The device accordingto claim 1, further comprising a film provided between the first side ofthe semiconductor layer and the optical layer.
 13. The device accordingto claim 12, wherein the film conformally covers the protrusions and therecesses of the semiconductor layer.
 14. The device according to claim12, wherein the film is an inorganic film.
 15. The device according toclaim 1, wherein the optical layer is provided on the first side of thesemiconductor layer without via a substrate.
 16. A semiconductor lightemitting device comprising: a semiconductor layer including a firstside, a second side opposite to the first side, and a light emittinglayer; a first electrode provided on the semiconductor layer on thesecond side; a second electrode provided on the semiconductor layer onthe second side; a first insulating film provided on the second side; afirst interconnect portion provided on the first insulating film andconnected to the first electrode; a second interconnect portion providedon the first insulating film and connected to the second electrode; asecond insulating film including a first portion provided between thefirst interconnect portion and the second interconnect portion, andincluding a second portion provided outside of a side face of thesemiconductor layer; an optical layer provided on the first side andbeing transmissive with respect to light emitted from the light emittinglayer, and a reflecting film provided on the side face of thesemiconductor layer via the first insulating film, a plurality ofprotrusions and a plurality of recesses being provided at the firstside, the plurality of protrusions including first protrusions andsecond protrusions shorter in a direction perpendicular to the lightemitting layer than the first protrusions, and peaks of all theprotrusions being positioned closer to the second side than an uppersurface of the second portion of the second insulating film, the peaksof all the protrusions being adjacent to the second insulating film viathe reflecting film.
 17. The device according to claim 16, wherein aheight of the first protrusions is not less than two times a height ofthe second protrusions.
 18. A semiconductor light emitting device,comprising: a semiconductor layer including a first side, a second sideopposite to the first side, and a light emitting layer; a firstelectrode provided on the semiconductor layer on the second side; asecond electrode provided on the semiconductor layer on the second side;a first insulating film provided on the second side; a firstinterconnect portion provided on the first insulating film and connectedto the first electrode; a second interconnect portion provided on thefirst insulating film and connected to the second electrode; a secondinsulating film including a first portion provided between the firstinterconnect portion and the second interconnect portion, and includinga second portion provided outside of a side face of the semiconductorlayer; an optical layer provided on the first side and beingtransmissive with respect to the light emitted from the light emittinglayer, and a reflecting film provided on the side face of thesemiconductor layer via the first insulating film, a plurality ofprotrusions and a plurality of recesses being provided at the firstside, and peaks of all the protrusions being positioned closer to thesecond side than an upper surface of the second portion of the secondinsulating film, the peaks of all the protrusions being adjacent to thesecond insulating film via the reflecting film, the first side beingcurved, and a center region of the first side sinking in toward thesecond side than an outer periphery region of the first side.
 19. Thedevice according to claim 18, wherein the first side is roughened.